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UG8xCT, UGF8CT, UGB8xCT
www.vishay.com
Vishay General Semiconductor
Revision: 06-Sep-13
3
Document Number: 88766
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA
= 25 °C unless otherwise noted)
Fig. 1 - Max. Forward Current Derating Curve
Fig. 2 - Max. Non-Repeti
tive Peak Forward Surge
Current Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Juncti
on Capacitance Per Diode
Fig. 6 - Reverse Switching Characteristics Per Diode
0
0
12
10
6
8
2
4
25 50 75 100 125 150
Average Forward Rectified Current (A)
Case Temperature (°C)
UG8JCT, UGB8JCT
UGF8JCT
P.C.B. with 7.5 x 7.5 x 0.3 cm
Copper Pad
1 10010
0
20
40
60
80
100
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
0.5 1.0 1.5 2.0 2.5
Instantaneous Forward Voltage (V)
0.01
0.1
10
100
1
Instantaneous Forward Current (A)
TJ
= 25 °C max.
Pulse Width = 300 μs
1 % Duty Cycle
0 10060
80
40
20
10
100
1000
10 000
1
TJ
= 100 °C
TJ
= 125 °C
TJ
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (μA)
Reverse Voltage (V)
Junction Capacitance (pF)
1 10010
100
10
1
TJ
= 25 °C
f = 1.0 MHz
Vsig
= 50 mVp-p
0
120
140
100
60
80
20
40
25 50 75 100 125 150
Stored Charge/Reverse Recovery Time
(nC/ns)
Qrr
Trr
IF
= 4 A
VR
= 30 V
dI/dt =
240 A/μs
60 A/μs
50 A/μs
50 A/μs
60 A/μs
240 A/μs
Junction Temperature (°C)
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